SSFM3008 30v n-channel mosfet www.goodark.com page 1 of 7 rev.1.0 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 50 i d @ tc = 100c continuous drain current, v gs @ 10v 40 i dm pulsed drain current 200 a power dissipation 100 w p d @tc = 25c linear derating factor 0.55 w/c v ds drain-source voltage 30 v v gs gate-to-source voltage 20 v e as single pulse avalanche energy @ l=0.1mh 100 mj i as avalanche current @ l=0.1mh 44 a t j t stg operating junction and storage temperature range -55 to + 175 c v dss 30v r ds (on) 5.0mohm(typ.) i d 50a marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product it utilizes the latest frrmos (fast reverse recovery mos) trench processing techniques to achieve the high cell density and reduces the on-resistance, fast switching and soft reverse recovery time. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. SSFM3008 SSFM3008
SSFM3008 30v n-channel mosfet 8 www.goodark.com page 2 of 7 rev.1.0 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 1.5 /w junction-to-ambient (t 10s) 45 /w r ja junction-to-ambient (pcb mounted, steady-state) 20 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 36.5 v v gs = 0v, id = 250a 5 8 m v gs =10v,i d =20a r ds(on) static drain-to-source on-resistance 7.5 10 m v gs =4.5v,i d =10a v gs(th) gate threshold voltage 1 3 v v ds = v gs , i d = 250a i dss drain-to-source leakage current 10 a v ds = 30v,v gs = 0v 100 v gs =20v i gss gate-to-source forward leakage -100 na v gs = -20v q g total gate charge 36 q gs gate-to-source charge 6.1 q gd gate-to-drain("miller") charge 9.6 nc v ds =15v, i d =20a, v gs =10v t d(on) turn-on delay time 10.9 t r rise time 46.5 t d(off) turn-off delay time 27.5 t f fall time 7.1 ns v gs =10v, vds=15v, r gen =3, i d =20a c iss input capacitance 1862 c oss output capacitance 360 c rss reverse transfer capacitance 235 pf v gs = 0v v ds = 15v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current 50 a i sm pulsed source current 200 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.65 1.3 v i s =1.0a, v gs =0v t rr reverse recovery time 24 ns q rr reverse recovery charge 26 nc t j = 25c, i f =20a, di/dt = 350a/s
SSFM3008 30v n-channel mosfet 8 www.goodark.com page 3 of 7 rev.1.0 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c.
SSFM3008 30v n-channel mosfet 8 www.goodark.com page 4 of 7 rev.1.0 typical electrical characteristics figure 1: typical output characteristics figure 2: typical transfer characteristics figure 3: on-resistance vs. gate-source voltage figure 4: body-diode characteristics figure 5: gate-charge characteristics figure 6: capacitance characteristics 0 20 40 60 80 100 0 1 2 3 4 5 vds,drain to source voltage(v) id,drain current(a) 10v 7v 6v 3.5v 4v 4.5v 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 vgs,gate to source voltage(v) id,drain current(a) 125 25 vds=5v 0 5 10 15 20 25 30 2 3 4 5 6 7 8 9 10 vgs,gate to source voltage(v) rdson,drain-to-source on resistance(normalized) 125 25 id=30a 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 vsd,source to drain voltage(v) is,source to drain current(a) 125 25 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 qg,gate charge(nc) vgs,gate to source voltage(v) vds=15v id=20a 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 qg,gate charge(nc) vgs,gate to source voltage(v) vds=15v id=20a 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 qg,gate charge(nc) vgs,gate to source voltage(v) 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 qg,gate charge(nc) vgs,gate to source voltage(v) vds=15v id=20a 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 vds, drain to source voltage(v) capacitance (pf) ciss coss crss vgs=0,f=1mhz ciss=cgd+cgs, cds shorted coss=cds+cgd crss=cgd
SSFM3008 30v n-channel mosfet 8 www.goodark.com page 5 of 7 rev.1.0 typical thermal characteristics figure 11: normalized thermal transient impedance curve 0.1 1 10 100 1000 0.01 0.1 1 10 100 vds,drain to source voltage(v) id,drain current(a) 10us 100us 1ms 10ms dc ron limited tj(max)=175 tc=25 figure 7: maximum forward biased safe operating area 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) power ( w) tj(max)=175 ta=25 figure 8: single pulse power rating junction-to-case 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 tcase (c) power dissipation (w) figure 9: power de-rating 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 tcase (c) id,drain current(a) figure 10: current de-rating 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) zjc,transient thermal resistance( normalized ) duty cycle d= 0.5,0.3,0.1,0.05,0.01,single tj max pdm*z jc*r jc+tc r jc=2.5 /w t t p d=t p /t
SSFM3008 30v n-channel mosfet 8 www.goodark.com page 6 of 7 rev.1.0 mechanical data
SSFM3008 30v n-channel mosfet 8 www.goodark.com page 7 of 7 rev.1.0 ordering and marking information device marking: SSFM3008 package (available) to-252 operating temperature range c : -55 to 175 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to-252 80 50 4000 10 40000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =125 to 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
|
